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2009/11/04
POWER ELECTRONICS
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ALL COMPETITIVE GURU
2009/11/04
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POWER ELECTRONICS
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POWER ELECTRONICS
UNIT I: Thyristor
Silicon controlled rectifier (SCR), construction and principle of operation, two-transistor analogy, static and
dynamic characteristics, gate characteristics, ratings, series and parallel operation of SCRs, over voltage
and over current protections, protection against high di/dt and high dv/dt, use of UJT for pulse generation.
UNIT II: Phase Controlled Rectifiers
Principle of phase control, performance parameters, single-phase half wave and full wave controlled
rectifiers, mid point and bridge converters, full controlled converters, half controlled converters,
comparison between full and half controlled converters, three-phase half wave and fully controlled bridge
converter, three-phase semi-converter, effect and source inductance in single-phase and three-phase
bridge converters, commutation or overlap angle, effect of overlap.
UNIT III: DC To DC Conversion
Principle of chopper operation, controlled strategies, step up chopper, step down chopper, chopper
configuration, forced commuted chopper, voltage commutated chopper, current commuted chopper, Load
commuted chopper, Jone’s chopper, Morgan chopper.
UNIT IV: Inverter
Classification of inverters, voltage source inverter, current source inverter, series resonant inverter,
modified series resonant inverter, parallel inverter, bridge inverter, auxiliary commuted single-phase
inverter, complementary commuted singe-phase inverter, and three-phase inverter, Cyclo-converters:
basic principle of operation, step-up and step down single-phase to single-phase Cyclo-converter.
UNIT V: Speed Control Of DC Motors
Four-quadrant operation of series and shunt DC motors, constant HP and constant torque operation,
various schemes of speed control (single converter, double converter, chopper), modern semiconductor
devices, power transistors, power bipolar junction transistors, steady state characteristics, switching
characteristics, switching limits, safe operating area, power MOSFET: steady state characteristics,
switching limits, safe operating area, IGBT: steady state characteristics, safe operating area.
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